Molecular beam epitaxy takes place in high vacuum or ultra-high vacuum (10−8 Pa). The most important aspect of MBE is the deposition rate (typically less than 3000 nm per hour) allows the films to grow epitaxially. These deposition rates require proportionally better vacuum to achieve the same impurity levels as other deposition techniques. The absence of carrier gases as well as the ultra high vacuum environment result in the highest achievable purity of the grown films.
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